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Die Attach Material Comparisons
Packaging high-power GaN devices? This study compares CuW and CMC bases with H20E and AuSn, revealing 34.5°C cooler junctions with CMC/AuSn. Revolutionize GaN efficiency/reliability.
StratEdge Corporation
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| Industry Paper |
Package and Die Attach Material Comparisons for High Power GaN Devices
Explore the vital role of packaging GaN devices! This study compares CuW and CMC bases with H20E and AuSn, revealing 34.5°C cooler junctions with CMC/AuSn.
StratEdge Corporation
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