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| Press Release |
June 6, 2025 - Click the title to read the full press release.
WIN Semiconductors Announces Linearity Optimized 0.12µm Gallium Nitride Power ProcessWIN Semiconductors Corp announces the launch of its NP12-1B, a groundbreaking 0.12 μm gate-length depletion-mode (D-mode) Gallium Nitride (GaN) High Electron Mobility ... WIN Semiconductors Corp |
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