Research Bits: April 16

Summary
Researchers at CiQUS and Forschungszentrum Juelich uncovered that oxide-based memristive devices exhibit adjustable thermal conductivity alongside electrical resistive switching. Oxygen ion accumulation at the metal-oxide interface induces a 20% modulation in heat flow resistance.
Semiconductor Engineering

Read the Full Article

The dedicated team at Semiconductor Packaging News has provided this summary for your convenience.