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August 31, 2010  -  Click the title to read the full article.

Samsung Showcasing Memory, Storage Server Solutions at VMworld
Samsung will exhibit leading memory and storage technologies for enterprises and small corporations in a 20,000 sq ft. booth, as well as ...
Samsung

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More from Samsung
January 20, 2012
Samsung Mass Producing Highly Efficient Embedded Multi-Chip Memory
Samsung Electronics Co., Ltd announced that it started producing embedded multi-chip package (eMCP) memory for use in the rapidly expanding market ...
Samsung Electronics Co., Ltd
January 5, 2012
Samsung SSD Receives CMVP FIPS Validation for Providing High Level of Data Security
Samsung Electronics Co., Ltd announced that its PM810 solid-state drives (SSDs) attained Cryptographic Module Validation Program (CMVP) validation ...
Samsung Electronics Co., Ltd
December 21, 2011
Panasonic, Samsung, Sandisk, Sony And Toshiba Join Forces To Collaborate On Next Generation Secure Memory Solution
Panasonic Corporation, Samsung Electronics Co., Ltd., SanDisk Corporation, Sony Corporation and Toshiba Corporation announced that they have reached ...
Samsung Electronics Co., Ltd.
October 7, 2011
Micron and Samsung Launch Consortium to Break Down the Memory Wall
Samsung Electronics Co., Ltd. and Micron Technology, Inc. announced the creation of a consortium for OEMs, enablers and integrators that will ...
Samsung
September 23, 2011
Samsung Begins Operation of World’s Largest Memory Fab, Line-16
Samsung Electronics Co., Ltd. announced that it has begun operations of its new Line-16 memory semiconductor fabrication facility, which will ...
Samsung Electronics Co., Ltd.
August 18, 2011
Samsung Develops 30nm-class 32GB Green DDR3
Samsung Electronics Co., Ltd. announced the development of 32 gigabyte (GB) double data rate-3 (DDR3) registered dual Inline memory modules ...
Samsung Electronics
June 2, 2011
Samsung Begins Mass Producing 30nm-class, 32-Gig Memory Modules
Samsung Electronics Co., Ltd. announced that it is the first in the industry to start mass producing 32 gigabyte (GB) memory modules ...
Samsung Electronics Co., Ltd.
January 20, 2011
Samsung High Capacity Memory Selected for HP ProLiant Servers
Samsung Electronics Co., Ltd. announced that its new 4 gigabit (Gb)-based 40 nanometer (nm) class* low power DDR3 memory will be used in HP ProLiant ...
Samsung Electronics Co., Ltd.
October 14, 2010
Samsung Producing 20nm-class, 64-Gb 3-bit NAND Flash Memory
Samsung Electronics Co., Ltd. announced the industry's first production of a 3-bit-cell (3bit), 64 gigabit (Gb) NAND flash using 20 nanometer ...
Samsung Electronics Co., Ltd.
October 11, 2010
Samsung Now Producing 100 and 200GB Solid State Drives
Samsung Electronics Co., Ltd. announced it is mass producing 100 and 200 gigabyte (GB) solid state drives (SSDs) for use as the primary storage ...
Samsung
September 2, 2010
Samsung Unveils 16GB 'Very Low Profile' Module in IBM's Blade Server
Samsung Electronics Co., Ltd. announced it will demonstrate for the first time a 16-Gigabyte (GB), very low profile (VLP) memory module at the ...
Samsung Electronics Co., Ltd.,
August 31, 2010
Samsung Showcasing Memory, Storage Server Solutions at VMworld
Samsung will exhibit leading memory and storage technologies for enterprises and small corporations in a 20,000 sq ft. booth, as well as ...
Samsung
July 28, 2010
Samsung and Toshiba to Support New Standardized NAND Spec
Samsung Electronics Co. and Toshiba announced their commitment to development of the most advanced high-performance NAND flash memory ...
Samsung
July 27, 2010
Samsung First to Begin Mass Producing 2-Gigabit Green DDR3
Samsung Electronics Co., Ltd. announced it has begun mass producing the industry's first two-gigabit (Gb) Green DDR3 using 30 nanometer (nm) ...
Samsung
July 1, 2010
Samsung Introduces 32gb Performance-enhancing Memory Module
Samsung Electronics Co., Ltd. announced it has developed the industry's first 32 gigabyte (GB) load-reduced, dual-inline memory module (LRDIMM ...
Samsung Electronics Co., Ltd.
June 29, 2010
Samsung Storage, Memory Selected for Next Gen HP ProLiant Servers
Samsung Electronics Co., Ltd. announced at HP Tech Forum 2010 that its 1.35 Volt, 1333 Mbps Green DDR3 DRAM memory, and Enterprise SSDs, have ...
Samsung Electronics Co., Ltd.
June 22, 2010
Samsung Introduces High-speed 512GB SSD
Samsung Electronics Co., Ltd. introduced the first solid state drive (SSD) utilizing high-performance toggle-mode DDR NAND. The new 512 ...
Samsung Electronics Co., Ltd.
May 7, 2010
Samsung Announces New High-performance NAND Memory
Samsung Electronics Co., Ltd. announced availability of an eight gigabit (Gb) OneNAND™ chip that takes advantage of advanced 30 nanometer (nm) ...
Samsung Electronics Co., Ltd.,
May 4, 2010
Samsung Ramping Up DDR3 Production to Accommodate Demand from Server Manufacturers Seeking High Energy Efficiency
Samsung Electronics Co., Ltd. announced that it is ramping up 40-nm class* production of high-density DDR3 memory chips to accommodate ...
Samsung Electronics Co., Ltd.
April 29, 2010
SAMSUNG Ships Industry's First Multi-chip Package with a PRAM Chip
Samsung Electronics Co., Ltd. announced the industry's first multi-chip package (MCP) with PRAM - for use in mobile handsets, beginning later ...
Samsung Electronics Co., Ltd.
April 21, 2010
Samsung Producing Industry’s First Higher-performing 20nm-class NAND Flash Memory
Samsung Electronics Co., Ltd. announced the industry's first production of 20 nanometer (nm) class NAND chips for use in Secure Digital (SD) ...
Samsung Electronics Co., Ltd.
March 30, 2010
SAMSUNG First to Begin Shipping 40nm-class, 32-Gigabyte Memory Module for Server Applications
Samsung Electronics Co., Ltd. announced that it has begun shipping samples of the industry's highest-density memory module for server systems ...
Samsung Electronics Co., Ltd.
February 25, 2010
Samsung Expands Green Line-up with 40nm-class 4Gigabit DDR3
Samsung Electronics Co., Ltd. announced it has begun mass producing the industry's first low-power (green) four gigabit (Gb) DDR3 devices using ...
Samsung Electronics Co., Ltd.
February 3, 2010
Samsung Develops Most Advanced Green DDR3 DRAM, using 30nm-class Technology
Samsung Electronics Co., Ltd. announced that the industry's first 30-nanometer-class DRAM has just successfully completed customer evaluations ...
Samsung Electronics Co., Ltd.
December 4, 2009
Samsung Announces 30-nm-class, 3-bit Multi-Level-Cell NAND Chips
Samsung Electronics Co., Ltd. announced that it commenced the industry's first volume production of 3-bit, multi-level-cell (MLC) NAND flash ...
Samsung Electronics Co., Ltd.
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