January 13, 2012 - Industry News
GaAs IC market growth slows to 1% in 2011
After growing 1.7% in 2009 then 36% in 2010, the gallium arsenide (GaAs) IC market grew just 1% in 2011, according to the 'The GaAs IC Market' from ...
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January 11, 2012 - Industry News
IMEC/AMAT produce first crack-free MOCVD nitride DH-structures on 200mm Si
IMEC and Applied Materials researchers say that they have shown for the first time that it is feasible to grow crack-free aluminum gallium nitride (AlGaN) ...
Semiconductor Today
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October 7, 2011 - Industry News
RFMD forms Compound Semiconductor Group
RF Micro Devices Inc of Greensboro, NC, USA has announced a strategic initiative to extend its compound semiconductor technologies into a broad ...
Semiconductor Today
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September 16, 2011 - Industry News
Deep ultraviolet goes deeper on silicon
Japan-based researchers have produced 256–278nm deep ultraviolet light-emitting diodes on silicon substrates. The organizations involved were ...
Semiconductor Today
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September 2, 2011 - Industry News
Passivated AlInN/GaN HEMT pushes beyond 200GHz cut-offs
Researchers in Switzerland report the first realization of fully passivated aluminum indium nitride on gallium nitride (AlInN/GaN) high-electron- ...
Semiconductor Today
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August 22, 2011 - Industry News
First Chinese Ka-band nitride semiconductor MMIC
Chinese Academy of Sciences (CAS) researchers have extended their work on gallium nitride (GaN) high-electron-mobility capability in the Ka-band ...
Semiconductor Today
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June 28, 2011 - Industry News
Dedicated LED Packaging Equipment to Drive $2bn Investment Over 2011–2016
Up to now, LED packaging houses have relied mostly on using retrofitted equipment and materials from IC fabs to improve LED cost of ownership ...
Semiconductor Today
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June 23, 2011 - Industry News
Combining high current with high transconductance
France's Institute of Electronic, Microelectronic and Nanotechnology (IEMN) has given a new report of record performance for nitride semiconductor ...
Semiconductor Today
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May 23, 2011 - Industry News
Wafer bonding to be driven by small size wafers for LEDs and 12" wafers for 3D stacking & CIS
Historically developed for micro-electro-mechanical system (MEMS) and then silicon-on-insulator (SOI) substrates, wafer bonding technology ...
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May 20, 2011 - Industry News
World Record Efficiency for Flexible CIGS Solar Cells on Plastics
A Swiss research team at Empa's Laboratory for Thin Film and Photovoltaics, led by Ayodhya N. Tiwari, have increased the energy conversion ...
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May 11, 2011 - Industry News
Nitride HEMTs with 245GHz cut-off
Researchers based in the USA have produced gallium nitride (GaN) semiconductor high-electron-mobility transistors (HEMTs) with indium ...
Semiconductor Today
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May 9, 2011 - Industry News
Compound semi firms diversify as handset market presents price erosion
Even while the handset portion of the compound semiconductor market remains the largest revenue producer, leading device suppliers are ...
Semiconductor Today
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April 12, 2011 - Industry News
EV Group wins Frost & Sullivan's Award
EV Group has received the 2010 European Nanoimprint Technology Product Innovation Award from market research firm Frost & Sullivan, recognizing ...
Semiconductor Today
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March 11, 2011 - Industry News
Liquid phase pushes deep ultraviolet to higher efficiency
Boston University has produced deep ultraviolet light-emitting diodes from epitaxial nitride semiconductor material that demonstrates a high internal ...
Semiconductor Today
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March 4, 2011 - Industry News
Lateral conduction, substrate-free deep UV nitride semiconductor LEDs
Nitek Inc and University of South Carolina (USC) have reported the first successful fabrication and characterization of lateral conduction, substrate-free ...
Semiconductor Today
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January 31, 2011 - Industry News
Normally-off nitride semiconductor tunnel junction FET with high drive
Hong Kong University of Science and Technology researchers have produced normally-off nitride semiconductor field-effect transistors with a drive ...
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January 31, 2011 - Industry News
GaAs device market grows 32% from $4.3bn to $4.9bn in 2010
Driven primarily by the rapid adoption of smartphones, gallium arsenide (GaAs) device market revenue grew more than 30% from 2009 to $4.9bn in ...
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January 10, 2011 - Industry News
Free-standing GaN from lateral overgrowth and chemical etch
Researchers from Gwangju Institute of Science and Technology and Samsung LED in Korea have developed a technique to chemically separate laterally ...
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November 12, 2010 - Industry News
SÜSS MicroTec and Fraunhofer IST launch aligner technology
SÜSS MicroTec AG of Garching and Braunschweig-based Fraunhofer for Surface Engineering and Thin Films (IST) have announced the launch of ...
Semiconductor Today
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October 19, 2010 - Industry News
Advancing infrared emission from nitride LEDs
Researchers based in the USA have used erbium (Er) doping to create nitride infrared (IR) light-emitting diodes (LEDs) with dominant emission under ...
Semiconductor Today
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July 30, 2010 - Industry News
Teledyne completes acquisition of Intelek
Teledyne Technologies Inc of Thousand Oaks, CA, USA has completed its acquisition of Intelek plc of Swindon, UK. Intelek's ordinary shareholders ...
Semiconductor Today
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July 29, 2010 - Industry News
Taiwan's LED production to surge 43% in 2010
With the growing popularity of LED-backlit LCD TVs fueling sales growth, the production value of Taiwan's LED industry is forecast to soar ...
Semiconductor Today
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July 28, 2010 - Industry News
Stanford buys Plasma-Therm deposition systems for Nanofab Facility
Plasma process equipment maker Plasma-Therm LLC says that Stanford University has recently placed an order for two deposition tools to be ...
Semiconductor Today
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July 23, 2010 - Industry News
First direct bonding of SiC–Si and GaN–Si at room temperature
Tokyo-based machinery manufacturer Mitsubishi Heavy Industries Ltd (MHI) claims that it has achieved the world’s first direct bonding of silicon ...
Semiconductor Today
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July 21, 2010 - Industry News
Quantum wells with AlGaN barriers increases laser light output
Researchers from the University of California Santa Barbara (UCSB) have reported improved 516nm 'green' laser diode performance from using ...
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