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January 5, 2022
VIEWPOINT 2022: Uwe Wagner, Chief Executive Officer, 3D-Micromac AG
SiC-based power devices are known for their advantages in boosting power efficiency and minimizing energy loss, which makes them ideal for use in electric vehicles (EVs), hybrid EVs, power supplies, and solar and wind inverters. Tesla, Toyota and other automakers have chosen power SiCs for their EV models, with more automakers expected to soon follow. It's therefore no surprise that market researchers are forecasting double-digit growth rates for power SiCs in the coming years. The formation of ohmic contacts on the backside of SiC devices plays an important role in defining their performance characteristics. As the industry migrates to thinner SiC wafers, thermal annealing--the traditional method of backside ohmic contact formation--is no longer feasible due to its potential to cause damage to the frontside of the wafer. Backside selective laser annealing is an attractive alternative due to its high precision and repeatability, and low thermal leakage, which prevent thermal damage to the wafer frontside that can negatively affect device performance. As SiC manufacturers look to expand production capacity to meet rising market demand fueled by the EV and renewable energy markets, they will need backside selective laser annealing solutions that are customized for SiC ohmic contact formation with high scalability, low cost of ownership and minimal footprint. As the industry leader in laser micromachining, 3D-Micromac stands ready to help SiC manufacturers to achieve manufacturing success and bring the world closer to a renewable and zero-emissions future. Uwe Wagner, Chief Executive Officer 3D-Micromac AG http://www.3d-micromac.com |
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