|
|
|
|
| Viewpoint | ||
February 15, 2016
VIEWPOINT 2016: Jim Witham, CEO, GaN Systems
Over the past decade, great strides have been made producing and packaging gallium nitride (GaN) transistors. Versus their silicon-only progenitors, GaN die overcome silicon's limitations in switching speed, voltage and current. Packaging advances have been critical to harness the full power of GaN. Low inductance interconnect and high thermal conductivity packages are mandatory. Wire bonds are out and copper is in. And packaging companies have responded to the shortcomings of TO-220 and PQFN packages with embedded die solutions. These GaN transistor die and packaging advances translate to lighter, smaller, cleaner and more energy efficient power systems, as seen in miniature power adapters, more efficient datacenters, and electric vehicles that charge faster and have extended ranges. Today, GaN transistor solutions help hundreds of manufacturers meet market pressures by increasing the efficiency of their products, while reducing product weight, size and cost of ownership. Manufacturers who have recognized and embraced this trend are adding to their IP arsenal, leapfrogging their competitors, and satisfying their expanding, electronics-hungry, energy-efficiency-demanding customers. Jim Witham, CEO GaN Systems http://www. |
| We search for industry news so you don't need to. | ||
|
|
Free Newsletter Subscription
Semiconductor Packaging News is built for professionals who bear the responsibility of looking ahead, imagining the future, and preparing for it. Insert Your Email Address |
|
|