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February 5, 2013

Richard Crisp, Vice President and Chief Technologist, Invensas Corp



Richard Crisp, Vice President and Chief Technologist, Invensas Corp
Richard Crisp, Vice President and Chief Technologist, Invensas Corp
The computational memory strategic inflection point continues in 2013. The Ultrabook, with its abandonment of the workhorse single die packaged DRAM, will begin to ramp into significant volumes.

It is now clear: solderdown memory is here to stay in the thin client platforms such as the Ultrabook and tablets. New multi-die DRAM packaging technology such as Invensas' DIMM-in-a-PACKAGE™ modules, will gain traction in the marketplace offering cost and area reduction to the motherboard while bringing build-time configuration flexibility via integrated co-support of DDR3 and LPDDR3 technologies using a common PCB.

Smartphone handsets now require bandwidth that would have been unheard of in all but supercomputers only a short number of years ago. Conventional wisdom is these high bandwidth 25+ GB/sec memory-to-processor links can only be provided using TSV technologies or Chip on Chip stacking. Neither approach supports the preferred Package On Package ("POP") stacking method and both are too immature and expensive to give confidence of the practicality of an annual multi-hundred million unit production ramp anytime soon.

The industry always finds a cheaper solution and the Invensas Bond Via Array ("BVA™") technology is one such assembly method that can provide more than 1200 I/Os on a 200 micron pitch for POP application using a highly-manufacturable wirebond-based assembly process.

Server and Datacenter memory is demanding performance and capacity scaling and within a declining power envelope. Reaching unprecedented system clock rates will require a rethinking of the workhorse industry-standard BGA ball map and packaging, with an emphasis on signal integrity and thermals for high density arrays.

New multi-die DRAM packages such as the Invensas DFD™ offer significant advances in thermal and electrical performance while supporting the latest DDR4 technology features in a density-scaled package featuring a ballmap designed for speed. Yet the manufacturing is based on proven high volume window BGA wirebond technology.

Despite all the change in the wind, wirebond continues to reign supreme in DRAM applications in 2013.

Richard Crisp, Vice President and Chief Technologist
Invensas Corp
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